Microchip TC4424AVOA713 Dual 3A High-Speed MOSFET Driver: Datasheet, Pinout, and Application Circuit Design

Release date:2026-01-15 Number of clicks:168

Microchip TC4424AVOA713 Dual 3A High-Speed MOSFET Driver: Datasheet, Pinout, and Application Circuit Design

In the realm of power electronics, efficiently controlling a MOSFET gate is a fundamental challenge. The gate, being highly capacitive, requires a driver capable of sourcing and sinking large peak currents to achieve fast switching, which is crucial for minimizing switching losses and improving overall system efficiency. The Microchip TC4424AVOA713 stands out as a robust solution designed specifically to meet this demanding task.

This article provides a detailed overview of this powerful driver, covering its key specifications from the datasheet, pinout configuration, and a practical application circuit to get your design up and running.

Datasheet Overview and Key Features

The TC4424AVOA713 is a dual, non-inverting MOSFET driver housed in an 8-pin SOIC package. Each channel is independent, capable of delivering 3A peak current, making it suitable for driving a wide array of power MOSFETs and IGBTs. Its design focuses on high-speed operation, with typical rise and fall times of just 25ns (with a 1000pF load), ensuring crisp switching transitions.

A key strength of this driver is its resilience to negative voltage transients on its outputs, a common occurrence in noisy switching environments like motor control bridges. It operates from a single power supply ranging from 4.5V to 18V, offering flexibility to interface with various logic levels (3V, 5V, 15V) while driving the MOSFET gate to the full supply voltage (Vdd). The inputs are CMOS/LSTTL compatible, with a defined logic threshold, making it easy to interface with microcontrollers, PWMs, and other logic circuits.

Pinout Configuration

Understanding the pinout is critical for proper PCB layout and functionality:

Pin 1 (INPUT A): Logic input for Channel 1.

Pin 2 (Vdd): Positive supply voltage pin for both channels.

Pin 3 (OUTPUT A): High-current output for Channel 1.

Pin 4 (GND): Ground reference for the IC.

Pin 5 (OUTPUT B): High-current output for Channel 2.

Pin 6 (NC): No internal connection.

Pin 7 (INPUT B): Logic input for Channel 2.

Pin 8 (Vdd): Positive supply voltage pin for both channels (connected internally to Pin 2).

The dual Vdd and GND pins are essential for lowering impedance and improving noise immunity. It is considered best practice to connect both Vdd pins to the power supply and to use a dedicated bypass capacitor placed as close as possible to the IC.

Application Circuit Design: Half-Bridge Configuration

A classic application for a dual driver like the TC4424AVOA713 is in a half-bridge circuit, common in motor drives, DC-DC converters, and inverters.

Design Steps and Considerations:

1. Power Supply (Vdd): Choose a Vdd voltage suitable for your MOSFET's Vgs rating (typically 12V). Decouple the Vdd pins with a high-quality, low-ESR ceramic capacitor (e.g., 1µF to 10µF) placed immediately adjacent to the IC. A larger bulk capacitor (e.g., 47µF) may be needed on the supply rail if it is located far away.

2. Input Logic: The INPUT A and INPUT B signals, typically from a microcontroller's PWM outputs, control the high-side and low-side MOSFETs. Critical note: The signals must be complementary with a dead time to prevent shoot-through (a condition where both MOSFETs are on simultaneously, creating a short circuit from Vdc to GND).

3. Gate Resistors (Rg): A small resistor (e.g., 2.2Ω to 10Ω) is placed in series with each driver output and the MOSFET gate. This gate resistor (Rg) serves two primary purposes: it controls the switching speed (dv/dt) to reduce EMI and dampens any ringing caused by parasitic inductance and the gate capacitance.

4. Bootstrapping (for High-Side Drive): In a half-bridge, the source pin of the high-side MOSFET (Q1) swings between ground and the high DC bus voltage. To keep its Vgs above the threshold, a bootstrap circuit is used. This consists of a diode (D_bs) and a capacitor (C_bs). The capacitor charges through the diode when the low-side switch (Q2) is on. When Q2 turns off and the driver switches Q1 on, the charged capacitor provides the floating voltage source needed to keep the high-side driver operational.

Conclusion and Design Verification

The Microchip TC4424AVOA713 provides a compact and powerful solution for driving MOSFETs in high-speed, high-current applications. A successful design hinges on careful attention to PCB layout: keep all high-current paths (especially from the driver to the MOSFET gate) as short and direct as possible to minimize parasitic inductance. Always verify switching waveforms with an oscilloscope to check for overshoot, ringing, and proper dead time implementation.

ICGOODFIND: The TC4424AVOA713 is an exceptional choice for engineers seeking a reliable, high-performance dual MOSFET driver. Its 3A output capability, high-speed switching, and robust design make it a versatile component for optimizing power conversion stages, from simple switch-mode power supplies to complex three-phase inverter systems.

Keywords: MOSFET Driver, Half-Bridge, Gate Resistor, Bootstrapping, Switching Speed.

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