Infineon IPL60R185C7 CoolMOS™ P7 Power Transistor: Datasheet, Application Notes, and Design Considerations

The relentless pursuit of higher efficiency, power density, and reliability in power electronics has made advanced semiconductor technologies indispensable. Among these, Infineon's CoolMOS™ series stands out, and the IPL60R185C7, a member of the revolutionary CoolMOS™ P7 family, exemplifies this leadership. This superjunction MOSFET is engineered to set new benchmarks in performance for a wide range of switched-mode power supplies (SMPS) and other power conversion applications.

Understanding the Datasheet: Key Parameters

The datasheet for the IPL60R185C7 provides a comprehensive overview of its capabilities. Designers should focus on several critical specifications:

Voltage and Current Ratings: This is a 650 V device, making it suitable for universal mains applications (85 V AC – 305 V AC). It offers a continuous drain current (I_D) of 11.5 A at 25°C, which is a robust rating for its package.

Ultra-Low On-Resistance (R_DS(on)): A hallmark of the CoolMOS™ technology is its exceptionally low resistance in the on-state. The IPL60R185C7 boasts a maximum R_DS(on) of just 185 mΩ at 10 V V_GS. This directly translates to minimized conduction losses, a primary factor in achieving high efficiency.

Dynamic Characteristics: The P7 technology is renowned for its excellent switching performance. The device features low gate charge (Q_G) and very low effective output capacitance (C_oss(eff)). This combination ensures reduced switching losses, allows for higher switching frequencies, and simplifies gate driving requirements.

Body Diode Robustness: The intrinsic body diode has a soft reverse recovery behavior. This is crucial for minimizing electromagnetic interference (EMI) and voltage stress in bridge topologies like PFC or half-bridge circuits.

Application Notes: Where It Excels

The IPL60R185C7 is designed for high-performance, high-density power supplies. Its primary applications include:

Server, Telecom, and Industrial SMPS: Its high voltage rating and efficiency make it ideal for power factor correction (PFC) stages (both boost and totem-pole configurations) and hard-switching DC-DC converters like flyback or forward converters.

Lighting: High-end LED driving solutions benefit from the device's ability to operate efficiently at high frequencies, enabling magnetics to be made smaller.

Solar and Renewable Energy: Inverters and converters for solar applications require efficient and reliable switching devices, a need met by the CoolMOS™ P7.

Critical Design Considerations

Successfully implementing this MOSFET requires attention to several design aspects:

1. Gate Driving: While the low Q_G simplifies driving, a low-inductance, capable gate driver circuit is essential to control switching speed and avoid parasitic turn-on. A gate-source voltage (V_GS) of +15 V / -5 V to +20 V is typically recommended for optimal performance.

2. Thermal Management: Despite its low losses, effective heat sinking is critical. The low thermal resistance of the TO-220 package must be leveraged with a proper heatsink to keep the junction temperature within safe limits, ensuring long-term reliability.

3. PCB Layout: A tight and optimized layout is non-negotiable. Minimizing parasitic inductance in the power loop (drain-source path) is vital to suppress voltage spikes and ringing during fast switching transitions.

4. EMI Mitigation: The fast switching speed, while beneficial for efficiency, can generate EMI. The device’s soft body diode helps, but careful layout, use of snubbers, and proper filtering are still required to meet regulatory standards.

ICGOOODFIND

ICGOOODFIND: The Infineon IPL60R185C7 CoolMOS™ P7 represents a significant leap in high-voltage MOSFET technology. Its blend of ultra-low R_DS(on), superior switching performance, and robustness makes it an exceptional choice for designers pushing the limits of power supply efficiency and power density. By carefully considering its driving, thermal, and layout requirements, engineers can fully harness its potential to create compact, cool-running, and highly reliable next-generation power systems.

Keywords:

1. CoolMOS™ P7

2. Ultra-Low R_DS(on)

3. High-Efficiency

4. Switching Performance

5. Power Density